Invention Grant
US07959985B2 Method of integrating PEALD Ta-containing films into Cu metallization
有权
将含有PEALD的含Ta的膜整合到Cu金属化中的方法
- Patent Title: Method of integrating PEALD Ta-containing films into Cu metallization
- Patent Title (中): 将含有PEALD的含Ta的膜整合到Cu金属化中的方法
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Application No.: US11378263Application Date: 2006-03-20
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Publication No.: US07959985B2Publication Date: 2011-06-14
- Inventor: Tadahiro Ishizaka , Tsukasa Matsuda , Masamichi Hara , Jacques Faguet , Yasushi Mizusawa
- Applicant: Tadahiro Ishizaka , Tsukasa Matsuda , Masamichi Hara , Jacques Faguet , Yasushi Mizusawa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H05H1/00
Abstract:
A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
Public/Granted literature
- US20070218683A1 Method of integrating PEALD Ta- containing films into Cu metallization Public/Granted day:2007-09-20
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