Invention Grant
US07960075B2 Photomask unit, exposing method and method for manufacturing semiconductor device
有权
光掩模单元，制造半导体器件的曝光方法和方法
- Patent Title: Photomask unit, exposing method and method for manufacturing semiconductor device
- Patent Title (中): 光掩模单元，制造半导体器件的曝光方法和方法
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Application No.: US11939030Application Date: 2007-11-13
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Publication No.: US07960075B2Publication Date: 2011-06-14
- Inventor: Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
- Applicant: Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2006-307258 20061113
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G02B5/08
Abstract:
A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle θ (0°
Public/Granted literature
- US20080124633A1 PHOTOMASK UNIT, EXPOSING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2008-05-29
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