Invention Grant
US07960200B2 Orientation-dependent etching of deposited AlN for structural use and sacrificial layers in MEMS
有权
在MEMS中用于结构使用和牺牲层的沉积AlN的取向依赖蚀刻
- Patent Title: Orientation-dependent etching of deposited AlN for structural use and sacrificial layers in MEMS
- Patent Title (中): 在MEMS中用于结构使用和牺牲层的沉积AlN的取向依赖蚀刻
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Application No.: US11789578Application Date: 2007-04-24
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Publication No.: US07960200B2Publication Date: 2011-06-14
- Inventor: Guillaume Bouche , Ralph N. Wall
- Applicant: Guillaume Bouche , Ralph N. Wall
- Applicant Address: US CA Sunnyvale
- Assignee: Maxim Integrated Products, Inc.
- Current Assignee: Maxim Integrated Products, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
In accordance with the present invention, accurate and easily controlled sloped walls may be formed using AlN and preferably a heated TMAH for such purpose as the fabrication of MEMS devices, wafer level packaging and fabrication of fluidic devices. Various embodiments are disclosed.
Public/Granted literature
- US20080268575A1 Orientation-dependent etching of deposited AIN for structural use and sacrificial layers in MEMS Public/Granted day:2008-10-30
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