Invention Grant
US07960202B2 Photodiode array having semiconductor substrate and crystal fused regions and method for making thereof
有权
具有半导体衬底和晶体熔融区的光电二极管阵列及其制造方法
- Patent Title: Photodiode array having semiconductor substrate and crystal fused regions and method for making thereof
- Patent Title (中): 具有半导体衬底和晶体熔融区的光电二极管阵列及其制造方法
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Application No.: US11987478Application Date: 2007-11-30
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Publication No.: US07960202B2Publication Date: 2011-06-14
- Inventor: Yoshimaro Fujii , Kouji Okamoto , Akira Sakamoto
- Applicant: Yoshimaro Fujii , Kouji Okamoto , Akira Sakamoto
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Disclosed is a photodiode array comprising a semiconductor substrate; a plurality of photodiodes formed on the semiconductor substrate; and crystal fused regions losing crystallinity by fusing a semiconductor material of the photodiodes between the plurality of photodiodes.
Public/Granted literature
- US20080096304A1 Photodiode array and method for making thereof Public/Granted day:2008-04-24
Information query
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