Invention Grant
- Patent Title: Tellurium precursors for GST films in an ALD or CVD process
- Patent Title (中): 在ALD或CVD过程中用于GST膜的碲前体
-
Application No.: US12272886Application Date: 2008-11-18
-
Publication No.: US07960205B2Publication Date: 2011-06-14
- Inventor: Manchao Xiao , Liu Yang , Thomas Richard Gaffney
- Applicant: Manchao Xiao , Liu Yang , Thomas Richard Gaffney
- Applicant Address: US PA Allentown
- Assignee: Air Products and Chemicals, Inc.
- Current Assignee: Air Products and Chemicals, Inc.
- Current Assignee Address: US PA Allentown
- Agent Lina Yang
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process.
Public/Granted literature
- US20090137100A1 Tellurium Precursors for GST Films in an ALD or CVD Process Public/Granted day:2009-05-28
Information query
IPC分类:
