Invention Grant
- Patent Title: Wafer level hermetic bond using metal alloy with raised feature
- Patent Title (中): 使用具有凸起特征的金属合金的晶圆级密封
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Application No.: US12459956Application Date: 2009-07-11
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Publication No.: US07960208B2Publication Date: 2011-06-14
- Inventor: Gregory A. Carlson , David M. Erlach , Alok Paranjpye , Jeffery F. Summers
- Applicant: Gregory A. Carlson , David M. Erlach , Alok Paranjpye , Jeffery F. Summers
- Applicant Address: US CA Goleta
- Assignee: Innovative Micro Technology
- Current Assignee: Innovative Micro Technology
- Current Assignee Address: US CA Goleta
- Agent Jaquelin K. Spong
- Main IPC: H01L21/48
- IPC: H01L21/48

Abstract:
Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on the second substrate, along with a raised feature formed on the first or the second substrate. At least one of the metal layers may be deposited conformally over the raised feature. The raised feature penetrates the molten material of the first or the second metal layers during formation of the alloy, and produces a spectrum of stoichiometries for the formation of the desired alloy, as a function of the distance from the raised feature. At some distance from the raised feature, the proper ratio of the first metal to the second metal exists to form an alloy of the preferred stoichiometry.
Public/Granted literature
- US20100003772A1 Wafer level hermetic bond using metal alloy with raised feature Public/Granted day:2010-01-07
Information query
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