Invention Grant
- Patent Title: Thin-film transistor substrate and method of fabricating the same
- Patent Title (中): 薄膜晶体管基板及其制造方法
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Application No.: US12575570Application Date: 2009-10-08
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Publication No.: US07960219B2Publication Date: 2011-06-14
- Inventor: Woong-Kwon Kim , In-Woo Kim , Ki-Hun Jeong
- Applicant: Woong-Kwon Kim , In-Woo Kim , Ki-Hun Jeong
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2008-0109411 20081105
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A thin-film transistor (“TFT”) substrate includes an insulating substrate, a gate line and a data line which are insulated from each other, disposed on the insulating substrate and are arranged in a lattice, and a pixel electrode which is electrically connected to the gate line and the data line by a switching device. The data line includes a lower layer which is formed of a transparent electrode, and an upper layer which is disposed directly on the lower layer.
Public/Granted literature
- US20100109008A1 THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-05-06
Information query
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