Invention Grant
US07960224B2 Operation method for multi-level switching of metal-oxide based RRAM
有权
基于金属氧化物的RRAM的多层次切换操作方法
- Patent Title: Operation method for multi-level switching of metal-oxide based RRAM
- Patent Title (中): 基于金属氧化物的RRAM的多层次切换操作方法
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Application No.: US12388655Application Date: 2009-02-19
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Publication No.: US07960224B2Publication Date: 2011-06-14
- Inventor: Wei-Chih Chien , Kuo-Pin Chang , Yi-Chou Chen , Erh-Kun Lai , Kuang-Yeu Hsieh
- Applicant: Wei-Chih Chien , Kuo-Pin Chang , Yi-Chou Chen , Erh-Kun Lai , Kuang-Yeu Hsieh
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Hayes Beffel & Wolfeld LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238

Abstract:
A method for operating a memory device includes applying a sequence of bias arrangements across a selected metal-oxide memory element to change among resistance states. The sequence of bias arrangements includes a first set of one or more pulses to change the resistance state of the selected metal-oxide memory element from the first resistance state to a third resistance state, and a second set of one or more pulses to change the resistance state of the selected metal-oxide memory element from the third resistance state to the second resistance state.
Public/Granted literature
- US20090154222A1 OPERATION METHOD FOR MULTI-LEVEL SWITCHING OF METAL-OXIDE BASED RRAM Public/Granted day:2009-06-18
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