Invention Grant
- Patent Title: Multiple-gate MOSFET device and associated manufacturing methods
- Patent Title (中): 多栅MOSFET器件及相关制造方法
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Application No.: US11726516Application Date: 2007-03-22
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Publication No.: US07960234B2Publication Date: 2011-06-14
- Inventor: Craig Henry Huffman , Weize Xiong , Cloves Rinn Cleavelin
- Applicant: Craig Henry Huffman , Weize Xiong , Cloves Rinn Cleavelin
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
One embodiment of the present invention relates to a method of fabricating a multi-gate transistor. During the method a second gate electrode material is selectively removed from a semiconductor structure from which the multi-gate transistor is formed, thereby exposing at least one surface of a first gate electrode material. The exposed surface of the first gate electrode material is deglazed. Subsequently, the first gate electrode material is removed. Other methods and devices are also disclosed.
Public/Granted literature
- US20080233697A1 Multiple-gate MOSFET device and associated manufacturing methods Public/Granted day:2008-09-25
Information query
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