Invention Grant
US07960249B2 Method for producing wafer for backside illumination type solid imaging device
有权
背面照明型固体成像装置用晶片的制造方法
- Patent Title: Method for producing wafer for backside illumination type solid imaging device
- Patent Title (中): 背面照明型固体成像装置用晶片的制造方法
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Application No.: US12553353Application Date: 2009-09-03
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Publication No.: US07960249B2Publication Date: 2011-06-14
- Inventor: Kazunari Kurita , Shuichi Omote
- Applicant: Kazunari Kurita , Shuichi Omote
- Applicant Address: JP Minato-ku, Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Minato-ku, Tokyo
- Agency: Christensen O'Connor Johnson Kindness PLLC
- Priority: JP2008-227965 20080905
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
A wafer for backside illumination type solid imaging device having a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side is produced by a method comprising a step of forming a BOX oxide layer on at least one of a wafer for support substrate and a wafer for active layer, a step of bonding the wafer for support substrate and the wafer for active layer and a step of thinning the wafer for active layer, which further comprises a step of forming a plurality of concave portions on a bonding face of the BOX oxide layer to the other wafer and filling a polysilicon plug into each of the concave portions to form a composite layer before the step of bonding the wafer for support substrate and the wafer for active layer.
Public/Granted literature
- US20100062584A1 METHOD FOR PRODUCING WAFER FOR BACKSIDE ILLUMINATION TYPE SOLID IMAGING DEVICE Public/Granted day:2010-03-11
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