Invention Grant
- Patent Title: Thin silicon wafer with high gettering ability and production method thereof
- Patent Title (中): 具有高吸气能力的薄硅晶片及其制造方法
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Application No.: US12436692Application Date: 2009-05-06
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Publication No.: US07960253B2Publication Date: 2011-06-14
- Inventor: Takaaki Shiota , Takashi Nakayama , Tomoyuki Kabasawa
- Applicant: Takaaki Shiota , Takashi Nakayama , Tomoyuki Kabasawa
- Applicant Address: JP Tokyo
- Assignee: SUMCO Corporation
- Current Assignee: SUMCO Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kilpatrick Townsend and Stockton LLP
- Priority: JP2008-121716 20080507
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 μm and an oxygen precipitate concentration of the oxygen precipitate layer is not less than 5×107 precipitates/cm3.
Public/Granted literature
- US20090278239A1 Silicon Wafer and Production Method Thereof Public/Granted day:2009-11-12
Information query
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