Invention Grant
- Patent Title: Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor
- Patent Title (中): 制造晶体半导体膜的方法和薄膜晶体管的制造方法
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Application No.: US12044193Application Date: 2008-03-07
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Publication No.: US07960261B2Publication Date: 2011-06-14
- Inventor: Takatsugu Omata
- Applicant: Takatsugu Omata
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2007-076908 20070323
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
The present invention relates to a method for manufacturing a polycrystalline semiconductor film that can be used for a semiconductor device. In the method, an amorphous semiconductor film is irradiated with a femtosecond laser to be crystallized. By laser irradiation using a femtosecond laser, when an amorphous semiconductor film over which a cap film is formed is crystallized with a laser, it becomes possible to perform crystallization of the semiconductor film and removal of the cap film at the same time. Therefore, a step of removing the cap film in a later step can be omitted.
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