A conductor-dielectric interconnect structure is fabricated by providing a structure comprising a dielectric layer having a patterned feature therein; depositing a plating seed layer on the dielectric layer in the patterned feature; depositing a sacrificial seed layer on the plating seed layer in the via; reducing the thickness of the sacrificial seed layer by reverse plating; and plating a conductive metal on the sacrificial seed layer in the patterned feature. Also provided is a dielectric layer having a via therein; a plating seed layer on the dielectric layer in the patterned feature; and a discontinuous sacrificial seed layer located in the patterned feature.