Electronic device and method of manufacturing the same

Invention Grant

US07960277B2 Electronic device and method of manufacturing the same 有权

Title translation: 电子设备及其制造方法

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Patent Title: Electronic device and method of manufacturing the same
Patent Title (中): 电子设备及其制造方法
Application No.: US12059745

Application Date: 2008-03-31
Publication No.: US07960277B2

Publication Date: 2011-06-14
Inventor: Mizuhisa Nihei
Applicant: Mizuhisa Nihei
Applicant Address: JP Yokohama
Assignee: Fujitsu Semiconductor Limited
Current Assignee: Fujitsu Semiconductor Limited
Current Assignee Address: JP Yokohama
Agency: Westerman, Hattori, Daniels & Adrian, LLP
Priority: JP2007-095368 20070330
Main IPC: H01L21/4763
IPC: H01L21/4763

Electronic device and method of manufacturing the same

Abstract:

An electronic device includes a conductive pattern formed on a first insulating film, a second insulating film formed on the conductive pattern and the first insulating film, a hole formed in the second insulating film on the conductive pattern, carbon nanotubes formed in the hole to extend from a surface of the conductive pattern, and a buried film buried in clearances among the carbon nanotubes in the hole.

Abstract(Chinese):

电子器件包括形成在第一绝缘膜上的导电图案，形成在导电图案上的第二绝缘膜和第一绝缘膜，形成在导电图案上的第二绝缘膜中的孔，形成在孔中的碳纳米管从导电图案的表面和掩埋在所述孔中的碳纳米管之间的间隙的掩埋膜。

Public/Granted literature

US20080237858A1 ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2008-10-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）