Method of film deposition

Invention Grant

US07960278B2 Method of film deposition 失效

Title translation: 薄膜沉积方法

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Patent Title: Method of film deposition
Patent Title (中): 薄膜沉积方法
Application No.: US12083962

Application Date: 2006-10-24
Publication No.: US07960278B2

Publication Date: 2011-06-14
Inventor: Hideaki Yamasaki , Yumiko Kawano
Applicant: Hideaki Yamasaki , Yumiko Kawano
Applicant Address: JP Tokyo
Assignee: Tokyo Electron Limited
Current Assignee: Tokyo Electron Limited
Current Assignee Address: JP Tokyo
Agency: Smith, Gambrell & Russell, LLP
Priority: JP2005-308817 20051024
International Application: PCT/JP2006/321156 WO 20061024
International Announcement: WO2007/049612 WO 20070503
Main IPC: H01L21/4763
IPC: H01L21/4763

Abstract:

The present invention is a method of film deposition that comprises a film-depositing step of supplying a high-melting-point organometallic material gas and a nitrogen-containing gas to a processing vessel that can be evacuated, so as to deposit a thin film of a metallic compound of a high-melting-point metal on a surface of an object to be processed placed in the processing vessel. A partial pressure of the nitrogen-containing gas during the film-depositing step is 17% or lower, in order to increase carbon density contained in the thin film.

Abstract(Chinese):

本发明是一种薄膜沉积方法，该方法包括一个成膜步骤，该方法是向可抽真空的处理容器提供高熔点有机金属材料气体和含氮气体，从而沉积一层薄膜处理容器内的待处理物体表面上的高熔点金属的金属化合物。为了提高薄膜中所含的碳密度，在成膜步骤中含氮气体的分压为17％以下。

Public/Granted literature

US20090140353A1 Method of Film Deposition and Film Deposition System Public/Granted day:2009-06-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）