A method for the production of a component structure. On embodiment provides a semiconductor body having a first side. A first trench and a second trench are produced, which extend into the semiconductor body proceeding from the first side and are arranged at a distance from one another in a lateral direction of the semiconductor body. A first material layer in the first trench is produced. A third trench proceeding from the second trench is produced, extending as far as the first material layer in the first lateral direction.