Invention Grant
- Patent Title: Porous organosilicate layers, and vapor deposition systems and methods for preparing same
- Patent Title (中): 多孔有机硅酸盐层，气相沉积系统及其制备方法
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Application No.: US12200229Application Date: 2008-08-28
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Publication No.: US07960291B2Publication Date: 2011-06-14
- Inventor: Eugene P. Marsh
- Applicant: Eugene P. Marsh
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
The present invention provides porous organosilicate layers, and vapor deposition systems and methods for preparing such layers on substrates. The porous organosilicate layers are useful, for example, as masks.
Public/Granted literature
- US20080318440A1 POROUS ORGANOSILICATE LAYERS, AND VAPOR DEPOSITION SYSTEMS AND METHODS FOR PREPARING SAME Public/Granted day:2008-12-25
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