Invention Grant
- Patent Title: Method for forming insulating film and method for manufacturing semiconductor device
- Patent Title (中): 绝缘膜的形成方法及半导体装置的制造方法
-
Application No.: US12302810Application Date: 2007-05-30
-
Publication No.: US07960293B2Publication Date: 2011-06-14
- Inventor: Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
- Applicant: Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-152783 20060531; JP2006-356083 20061228
- International Application: PCT/JP2007/060975 WO 20070530
- International Announcement: WO2007/139141 WO 20071206
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method for forming an insulating film includes forming a silicon nitride film on a silicon surface by subjecting a target substrate wherein silicon is exposed in the surface to a treatment for nitriding the silicon, forming a silicon oxynitride film by heating the target substrate provided with the silicon nitride film in an N2O atmosphere, and nitriding the silicon oxynitride film.
Public/Granted literature
- US20090197403A1 METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2009-08-06
Information query
IPC分类:
