The micro-switch structure comprises, on a substrate 1 coated with a passivation layer 2, a first signal line LS-IN and a second signal line LS-OUT disposed in the projected extension of one another, separated by a switching region 10; a control electrode 3 in said region, a dielectric material 4 with high relative permittivity invariant in frequency, disposed on the control electrode in such a manner that, between the two signal lines, the control electrode is wider on either side and, in the orthogonal direction, the dielectric protrudes on either side of the control electrode and rests on the passivation layer; parallel ground lines, disposed symmetrically on either side of the signal lines and formed on a topological level separated from that of the signal lines by at least one insulating layer made of a material different from that of the passivation layer.