Invention Grant
US07960712B2 Switching element, switching element drive method and fabrication method, reconfigurable logic integrated circuit, and memory element 有权
开关元件,开关元件驱动方法和制造方法,可重构逻辑集成电路和存储元件

  • Patent Title: Switching element, switching element drive method and fabrication method, reconfigurable logic integrated circuit, and memory element
  • Patent Title (中): 开关元件,开关元件驱动方法和制造方法,可重构逻辑集成电路和存储元件
  • Application No.: US11722982
    Application Date: 2005-12-22
  • Publication No.: US07960712B2
    Publication Date: 2011-06-14
  • Inventor: Toshitsugu SakamotoHisao Kawaura
  • Applicant: Toshitsugu SakamotoHisao Kawaura
  • Applicant Address: JP Tokyo
  • Assignee: NEC Corporation
  • Current Assignee: NEC Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2004-377607 20041227
  • International Application: PCT/JP2005/023628 WO 20051222
  • International Announcement: WO2006/070693 WO 20060706
  • Main IPC: H01L47/00
  • IPC: H01L47/00
Switching element, switching element drive method and fabrication method, reconfigurable logic integrated circuit, and memory element
Abstract:
The switching element of the present invention includes: an ion conduction layer (4) in which metal ions can move freely; a first electrode (1) that contacts the ion conduction layer (4); and a second electrode (2) that contacts the ion conduction layer (4), that is formed such that the ion conduction layer (4) is interposed between the first electrode (1) and the second electrode (2), and that supplies metal ions to the ion conduction layer (4) or that receives metal ions from the ion conduction layer (4) to cause precipitation of the metal that corresponds to the metal ions. An introduction path (5) composed of the metal and of a prescribed width is further provided on the ion conduction layer (4) for electrically connecting the first electrode (1) and the second electrode (2). The application of voltage to the first electrode (1) relative to the second electrode (2) then causes an electrochemical reaction between the introduction path (5) and the second electrode (2) whereby the electrical characteristics are switched.
Information query
Patent Agency Ranking
0/0