Invention Grant
- Patent Title: Field effect transistor and method of producing the same
- Patent Title (中): 场效应晶体管及其制造方法
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Application No.: US10571688Application Date: 2005-03-08
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Publication No.: US07960716B2Publication Date: 2011-06-14
- Inventor: Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Satomi Sugiyama
- Applicant: Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Satomi Sugiyama
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2004-067440 20040310
- International Application: PCT/JP2005/004407 WO 20050308
- International Announcement: WO2005/086253 WO 20050915
- Main IPC: H01L51/30
- IPC: H01L51/30 ; H01L51/40
Abstract:
An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity I1 in a Bragg angle (2θ) range of 9.9° to 10.4° stronger than a maximum diffraction intensity I2 in a Bragg angle (2θ) range of 23.0° to 26.0° in X-ray diffraction using CuKα radiation.
Public/Granted literature
- US20080308789A1 Field Effect Transistor and Method of Producing the Same Public/Granted day:2008-12-18
Information query
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