Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11791615Application Date: 2005-11-21
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Publication No.: US07960719B2Publication Date: 2011-06-14
- Inventor: Kiyoshi Kato
- Applicant: Kiyoshi Kato
- Applicant Address: JP Atsugi-shi, Kangawa-ken
- Assignee: Semiconductor Energy Laboratotry Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratotry Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kangawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-351096 20041203
- International Application: PCT/JP2005/021747 WO 20051121
- International Announcement: WO2006/059554 WO 20060608
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L51/00

Abstract:
The invention provides a semiconductor device where data can be written after the production and forgery caused by rewriting of data can be prevented, and which can be manufactured at a low cost using a simple structure and an inexpensive material. Further, the invention provides a semiconductor device having the aforementioned functions, where wireless communication is not blocked by the internal structure. The semiconductor device of the invention has an organic memory provided with a memory cell array including a plurality of memory cells, a control circuit for controlling the organic memory, and a wire for connecting an antenna. Each of the plurality of memory cells has a transistor and a memory element. The memory element has a structure where an organic compound layer is provided between a first conductive layer and a second conductive layer. The second conductive layer is formed in a linear shape.
Public/Granted literature
- US20080164464A1 Semiconductor Device Public/Granted day:2008-07-10
Information query
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