Invention Grant
- Patent Title: Light-emitting device structure and semiconductor wafer structure with the same
- Patent Title (中): 发光元件结构与半导体晶圆结构相同
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Application No.: US12421923Application Date: 2009-04-10
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Publication No.: US07960749B2Publication Date: 2011-06-14
- Inventor: Shu Hui Lin
- Applicant: Shu Hui Lin
- Applicant Address: TW Taichung
- Assignee: Huga Optotech Inc.
- Current Assignee: Huga Optotech Inc.
- Current Assignee Address: TW Taichung
- Agency: WPAT, P.C.
- Agent Anthony King
- Priority: TW97144631A 20081119
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light-emitting device structure comprises a substrate having a first region and a second region outside the first region, a first conductive type semiconductor layer positioned on the first region, a light-emitting structure positioned on the first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on the light-emitting structure, and a wall structure positioned on the second region.
Public/Granted literature
- US20100123146A1 LIGHT-EMITTING DEVICE STRUCTURE AND SEMICONDUCTOR WAFER STRUCTURE WITH THE SAME Public/Granted day:2010-05-20
Information query
IPC分类:
