Invention Grant
- Patent Title: Surface plasmon polariton actuated transistors
- Patent Title (中): 表面等离子体激元激发晶体管
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Application No.: US11900346Application Date: 2007-09-11
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Publication No.: US07960753B2Publication Date: 2011-06-14
- Inventor: Joshua A. Conway , Ryan A. Stevenson , Jon V. Osborn
- Applicant: Joshua A. Conway , Ryan A. Stevenson , Jon V. Osborn
- Applicant Address: US CA El Segundo
- Assignee: The Aerospace Corporation
- Current Assignee: The Aerospace Corporation
- Current Assignee Address: US CA El Segundo
- Agent Paul D. Chancellor, Ocean Law
- Main IPC: H01L29/24
- IPC: H01L29/24 ; H01L29/10

Abstract:
A surface plasmon polaritron activated semiconductor device uses a surface plasmon wire that functions as an optical waveguide for fast communication of a signal and functions as a energy translator using a wire tip for translating the optical signal passing through the waveguide into plasmon-polaritron energy at a connection of the semiconductor device, such as a transistor, to activate the transistor for improved speed of communications and switching for preferred use in digital systems.
Public/Granted literature
- US20090065801A1 Surface plasmon polariton actuated transistors Public/Granted day:2009-03-12
Information query
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