Invention Grant
- Patent Title: Strained quantum-well semiconductor devices
- Patent Title (中): 应变量子阱半导体器件
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Application No.: US10577938Application Date: 2004-11-08
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Publication No.: US07960755B2Publication Date: 2011-06-14
- Inventor: Timothy J Phillips , Timothy Ashley
- Applicant: Timothy J Phillips , Timothy Ashley
- Applicant Address: GB London
- Assignee: QinetiQ Limited
- Current Assignee: QinetiQ Limited
- Current Assignee Address: GB London
- Agency: Nixon & Vanderhye P.C.
- Priority: GB0326993 20031120
- International Application: PCT/GB2004/004722 WO 20041108
- International Announcement: WO2005/053030 WO 20050609
- Main IPC: H01L31/0328
- IPC: H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109

Abstract:
In a transistor in which the majority carriers are holes, at least one narrow bandgap region or layer is doped p-type or contains an excess of holes and is subject to compressive mechanical strain, whereby hole mobility may be significantly increased. In a p-channel quantum well FET, the quantum well InSb well p-type layer 5 (modulation or directly doped) lies between In1-xAlxSb layers 4, 6 where x is of a value sufficient to induce strain in layer 5 to an extent that light and heavy holes are separated by much more than kT. Transistors falling within the invention, including bipolar pnp devices, may be used with their more conventional electron majority carriers counterparts in complementary logic circuitry.
Public/Granted literature
- US20070029574A1 Strained semiconductor devices Public/Granted day:2007-02-08
Information query
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