Invention Grant
- Patent Title: Transistors including supported gate electrodes
- Patent Title (中): 晶体管包括支持的栅电极
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Application No.: US12468537Application Date: 2009-05-19
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Publication No.: US07960756B2Publication Date: 2011-06-14
- Inventor: Scott T. Sheppard , Scott Allen
- Applicant: Scott T. Sheppard , Scott Allen
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L29/778
- IPC: H01L29/778
Abstract:
A transistor includes a protective layer having an opening extending therethrough on a substrate, and a gate electrode in the opening. First portions of the gate electrode laterally extend on surface portions of the protective layer outside the opening on opposite sides thereof, and second portions of the gate electrode are spaced apart from the protective layer and laterally extend beyond the first portions. Related devices are also discussed.
Public/Granted literature
- US20090224289A1 Transistors including supported gate electrodes Public/Granted day:2009-09-10
Information query
IPC分类:
