Invention Grant
- Patent Title: Bipolar transistor and radio frequency amplifier circuit
- Patent Title (中): 双极晶体管和射频放大电路
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Application No.: US11395129Application Date: 2006-04-03
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Publication No.: US07960758B2Publication Date: 2011-06-14
- Inventor: Masahiro Maeda
- Applicant: Masahiro Maeda
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-108375 20050405
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A bipolar transistor and a radio frequency amplifier circuit capable of preventing thermal runaway in the bipolar transistor without affecting the radio frequency amplifier circuit, which includes: a direct-current (DC) bias terminal to which a DC bias is supplied; a DC base electrode connected to the DC terminal; a radio frequency (RF) power terminal to which a radio frequency signal is supplied; an RF base electrode connected to the RF terminal; and a base layer connected to the DC base electrode and the RF base electrode.
Public/Granted literature
- US20060223484A1 Bipolar transistor and radio frequency amplifier circuit Public/Granted day:2006-10-05
Information query
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