Invention Grant
US07960760B2 Electrically programmable fuse 有权
电可编程保险丝

Electrically programmable fuse
Abstract:
A semiconductor device includes a fin-fuse and an SOI transistor. The SOI transistor is located on an SOI substrate and has a source region and a drain region. The fin-fuse is connected to one of the source/drain regions and has a fusible link located on the SOI substrate. The fusible link has a homogeneous dopant concentration.
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