Invention Grant
- Patent Title: Transistor with floating gate and electret
- Patent Title (中): 具有浮动栅极和驻极体的晶体管
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Application No.: US11862867Application Date: 2007-09-27
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Publication No.: US07960776B2Publication Date: 2011-06-14
- Inventor: Myongseob Kim , Nick Yu-Min Shen , Chungho Lee , Edwin Chihchuan Kan
- Applicant: Myongseob Kim , Nick Yu-Min Shen , Chungho Lee , Edwin Chihchuan Kan
- Applicant Address: US NY Ithaca
- Assignee: Cornell Research Foundation, Inc.
- Current Assignee: Cornell Research Foundation, Inc.
- Current Assignee Address: US NY Ithaca
- Agency: Schwegman, Lundberg & Woessner P.A.
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A sensor includes a field effect transistor having a source, drain, a control gate and floating gate, wherein the floating gate has an extended portion extending away from the control gate. A sensing gate is capacitively coupled to the extended portion of the floating gate. A polymer electret sensing coating is electrically coupled to the sensing gate.
Public/Granted literature
- US20080094074A1 TRANSISTOR WITH FLOATING GATE AND ELECTRET Public/Granted day:2008-04-24
Information query
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