Invention Grant
US07960802B2 Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget
有权
通过在低热预算下引入氧气和氢气来提高中间间隙金属有效功能的方法
- Patent Title: Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget
- Patent Title (中): 通过在低热预算下引入氧气和氢气来提高中间间隙金属有效功能的方法
-
Application No.: US12621618Application Date: 2009-11-19
-
Publication No.: US07960802B2Publication Date: 2011-06-14
- Inventor: Hiroaki Niimi , James Joseph Chambers
- Applicant: Hiroaki Niimi , James Joseph Chambers
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A process is disclosed of forming metal replacement gates for PMOS transistors with oxygen in the metal gates such that the PMOS gates have effective work functions above 4.85. Metal work function layers in the PMOS gates are oxidized at low temperature to increase their effective work functions to the desired PMOS range. Hydrogen may also be incorporated at an interface between the metal gates and underlying gate dielectrics. Materials for the metal work function layers and processes for the low temperature oxidation are disclosed.
Public/Granted literature
Information query
IPC分类:
