Invention Grant
US07960805B2 MEMS structure with suspended microstructure that includes dielectric layer sandwiched by plural metal layers and the dielectric layer having an edge surrounded by peripheral metal wall
有权
具有悬浮微结构的MEMS结构，其包括由多个金属层夹持的电介质层和具有被外围金属壁包围的边缘的电介质层
- Patent Title: MEMS structure with suspended microstructure that includes dielectric layer sandwiched by plural metal layers and the dielectric layer having an edge surrounded by peripheral metal wall
- Patent Title (中): 具有悬浮微结构的MEMS结构，其包括由多个金属层夹持的电介质层和具有被外围金属壁包围的边缘的电介质层
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Application No.: US12348322Application Date: 2009-01-05
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Publication No.: US07960805B2Publication Date: 2011-06-14
- Inventor: Jen-Yi Chen , Chin-Horng Wang
- Applicant: Jen-Yi Chen , Chin-Horng Wang
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW97137955A 20081002
- Main IPC: H01L29/84
- IPC: H01L29/84
Abstract:
An MEMS structure and a method of manufacturing the same are provided. The MEMS structure includes a substrate and at least one suspended microstructure located on the substrate. The suspended microstructure includes a plurality of metal layers, at least one dielectric layer, and at least one peripheral metal wall. The dielectric layer is sandwiched by the metal layers, and the peripheral metal wall is parallel to a thickness direction of the suspended microstructure and surrounds an edge of the dielectric layer.
Public/Granted literature
- US20100084723A1 MEMS STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-04-08
Information query
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