Invention Grant
US07960813B2 Programmable resistance memory devices and systems using the same and methods of forming the same
有权
可编程电阻存储器件和使用该器件的系统及其形成方法
- Patent Title: Programmable resistance memory devices and systems using the same and methods of forming the same
- Patent Title (中): 可编程电阻存储器件和使用该器件的系统及其形成方法
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Application No.: US12626126Application Date: 2009-11-25
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Publication No.: US07960813B2Publication Date: 2011-06-14
- Inventor: Jun Liu
- Applicant: Jun Liu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/108 ; H01L29/94 ; H01L31/119 ; H01L29/00
Abstract:
A programmable resistance memory element and method of forming the same. The memory element includes a first electrode, a dielectric layer over the first electrode and a second electrode over the dielectric layer. The dielectric layer and the second electrode each have sidewalls. A layer of programmable resistance material, e.g., a phase change material, is in contact with the first electrode and at least a portion of the sidewalls of the dielectric layer and the second electrode. Memory devices including memory elements and systems incorporating such memory devices are also disclosed.
Public/Granted literature
- US20100065806A1 PROGRAMMABLE RESISTANCE MEMORY DEVICES AND SYSTEMS USING THE SAME AND METHODS OF FORMING THE SAME Public/Granted day:2010-03-18
Information query
IPC分类:
