Invention Grant
US07960823B2 Semiconductor device with different sized ESD protection elements
有权
具有不同尺寸ESD保护元件的半导体器件
- Patent Title: Semiconductor device with different sized ESD protection elements
- Patent Title (中): 具有不同尺寸ESD保护元件的半导体器件
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Application No.: US12055869Application Date: 2008-03-26
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Publication No.: US07960823B2Publication Date: 2011-06-14
- Inventor: Yukinori Uchino
- Applicant: Yukinori Uchino
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2007-082871 20070327
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A semiconductor device of an aspect of the present invention comprises a package substrate, one first power supply terminal provided on the package substrate, one second power supply terminal provided on the package substrate, a semiconductor chip disposed on the package substrate, first and second internal power supply circuits provided in the semiconductor chip, one first ESD protection element which is provided in the first internal power supply circuit and which is connected to the first power supply terminal, and a plurality of second ESD protection elements, the second ESD protection elements being provided in the second internal power supply circuit, the size of one second ESD protection element being smaller than that of the first ESD protection element, the second ESD protection elements being connected to the common second power supply terminal.
Public/Granted literature
- US20080237645A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-10-02
Information query
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