Invention Grant
US07960984B2 Semiconductor device having ESD protection circuit and method of testing the same
有权
具有ESD保护电路的半导体器件及其测试方法
- Patent Title: Semiconductor device having ESD protection circuit and method of testing the same
- Patent Title (中): 具有ESD保护电路的半导体器件及其测试方法
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Application No.: US12232592Application Date: 2008-09-19
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Publication No.: US07960984B2Publication Date: 2011-06-14
- Inventor: Young-Don Choi , Hoe-Ju Chung
- Applicant: Young-Don Choi , Hoe-Ju Chung
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2007-0095685 20070920
- Main IPC: G01R31/3187
- IPC: G01R31/3187

Abstract:
A semiconductor device having an electrostatic discharge (ESD) protection circuit and a method of testing the same may provided. The semiconductor device may include one or more stacked chips, each stacked chip may include a test circuit configured to output a test control signal and a selection control signal in response to a test enable signal, an internal circuit configured to perform an operation and output a plurality of test signals in response to the test control signal, at least one multiplexer (MUX) configured to select and output one of the plurality of test signals based on the selection control signal, at least one test pad configured to receive the selected test signal, and at least one electrostatic discharge (ESD) protection circuit configured to discharge static electricity applied through the test pad externally.
Public/Granted literature
- US20090085599A1 Semiconductor device having ESD protection circuit and method of testing the same Public/Granted day:2009-04-02
Information query
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