Invention Grant
- Patent Title: Operation voltage supply method for semiconductor device
- Patent Title (中): 半导体器件的工作电压供给方法
-
Application No.: US12503423Application Date: 2009-07-15
-
Publication No.: US07960987B2Publication Date: 2011-06-14
- Inventor: Shinobu Watanabe
- Applicant: Shinobu Watanabe
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Kubotera & Associates, LLC
- Priority: JP2003-322803 20030916
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R31/02

Abstract:
The voltage application probe and the voltage measurement probe are connected to the voltage application pad and the voltage measurement pad of the semiconductor device. The voltage application pad and the voltage measurement pad are connected by the conductor, measuring the voltage applied to the voltage application pad through the voltage measurement probe. The voltage compensation circuit in the voltage development device operates to make the voltage applied to the voltage application pad equal to the set voltage for the voltage development device. Even when the resistance between the voltage application probe and the voltage application pad increases, the accurate setting voltage is applied to the voltage application pad.
Public/Granted literature
- US20090322363A1 OPERATION VOLTAGE SUPPLY METHOD FOR SEMICONDUCTOR DEVICE Public/Granted day:2009-12-31
Information query