Invention Grant
US07961016B2 Charge pump and charging/discharging method capable of reducing leakage current 有权
充电泵和充放电方法能够减少漏电流

  • Patent Title: Charge pump and charging/discharging method capable of reducing leakage current
  • Patent Title (中): 充电泵和充放电方法能够减少漏电流
  • Application No.: US12500568
    Application Date: 2009-07-09
  • Publication No.: US07961016B2
    Publication Date: 2011-06-14
  • Inventor: Wen-Chang Cheng
  • Applicant: Wen-Chang Cheng
  • Applicant Address: TW Kueishan, Tao-Yuan Hsien
  • Assignee: Nanya Technology Corp.
  • Current Assignee: Nanya Technology Corp.
  • Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
  • Agent Winston Hsu; Scott Margo
  • Main IPC: H03L7/06
  • IPC: H03L7/06
Charge pump and charging/discharging method capable of reducing leakage current
Abstract:
A charge pump includes a first transistor, a second transistor, a first, a second and a third selectors. The first transistor includes a gate electrode, a first electrode, and a second electrode which serves as an output port of the charge pump. The second transistor includes a gate electrode, a first electrode and a second electrode, where the gate electrode of the first transistor is coupled to the gate electrode of the second transistor, and the gate electrode of the second transistor is coupled to the second electrode of the second transistor. The first selector is utilized for selectively connecting the first transistor to a first supply voltage. The second selector is utilized for selectively connecting the first transistor to a second supply voltage. The third selector is utilized for selectively connecting the second transistor to the second supply voltage.
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