A method for compensating negative bias temperature instability (NBTI) effects on a given model of transistors includes monitoring the NBTI effects on the transistors over time, determining a change in a threshold voltage of the transistors over time based on the monitoring, determining a forward bias voltage based on the change in threshold voltage, and applying the forward bias voltage to the transistors over time. The method may further include storing the monitoring results in a lookup table, and adjusting the forward bias voltage based on the lookup table. The monitoring may include emulating the NBTI effects on a system comprising a plurality of semiconductor devices in which the transistors are used.