Invention Grant
- Patent Title: Intermediate potential generation circuit
- Patent Title (中): 中间电位生成电路
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Application No.: US12659398Application Date: 2010-03-08
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Publication No.: US07961037B2Publication Date: 2011-06-14
- Inventor: Nobumitsu Yano
- Applicant: Nobumitsu Yano
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-067755 20090319
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
Provided is an intermediate potential generation circuit with a lower power supply potential. The intermediate potential generation circuit includes: a current mirror circuit including a first transistor and a second transistor each having a source input with a power supply potential; a current source circuit including a third transistor having a drain connected to a drain of the first transistor; a grounded source amplifier circuit including a fourth transistor having a gate input with the intermediate potential, and a drain connected to a drain of the second transistor; a parallel connection circuit including a fifth transistor connected in parallel with the first transistor, and a sixth transistor connected in parallel with the second transistor; and a source follower circuit including a seventh transistor and an eighth transistor having gates that are connected in common to each other, and connected with the drains of the second transistor and the sixth transistor.
Public/Granted literature
- US20100237932A1 Intermediate potential generation circuit Public/Granted day:2010-09-23
Information query
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