Invention Grant
US07961441B2 Exchange coupled film including hafnium and amorphous layers usable in a magnetoresistive element in a thin-film magnetic head 有权
交换耦合膜包括可用于薄膜磁头中的磁阻元件的铪和非晶层

Exchange coupled film including hafnium and amorphous layers usable in a magnetoresistive element in a thin-film magnetic head
Abstract:
The exchange coupled film according to the present invention comprises a buffer layer including a laminate in which an amorphous layer and a hafnium layer are laminated in that order, an antiferromagnetic layer laminated on the hafnium layer of the buffer layer via an intermediate layer with a thickness of at least 2 nm, and a pinned magnetic layer laminated on the antiferromagnetic layer.
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