Invention Grant
- Patent Title: Tunneling magnetic detecting element having insulation barrier layer and method for making the same
- Patent Title (中): 具有绝缘阻挡层的隧道磁检测元件及其制造方法
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Application No.: US11947315Application Date: 2007-11-29
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Publication No.: US07961442B2Publication Date: 2011-06-14
- Inventor: Kazumasa Nishimura , Ryo Nakabayashi , Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
- Applicant: Kazumasa Nishimura , Ryo Nakabayashi , Naoya Hasegawa , Masamichi Saito , Yosuke Ide , Masahiko Ishizone
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2007-021069 20070131
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A tunneling magnetic detecting element includes an insulating barrier layer having a layered structure including a Ti—O sublayer and a Ta—O sublayer. The Ta concentration in the insulating barrier layer is set to be more than 0 at % but not more than about 7 at % with respect to a total of 100 at % of Ti and Ta constituting the insulating barrier layer.
Public/Granted literature
- US20080182111A1 TUNNELING MAGNETIC DETECTING ELEMENT AND METHOD FOR MAKING THE SAME Public/Granted day:2008-07-31
Information query
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