Invention Grant
- Patent Title: Semiconductor photoelectrode, method for manufacturing the same, and light energy converting device
- Patent Title (中): 半导体光电极，其制造方法和光能转换装置
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Application No.: US11911977Application Date: 2006-03-29
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Publication No.: US07961452B2Publication Date: 2011-06-14
- Inventor: Takashi Oi , Yasukazu Iwasaki , Kazuhiro Sayama
- Applicant: Takashi Oi , Yasukazu Iwasaki , Kazuhiro Sayama
- Applicant Address: JP Yokohama-shi
- Assignee: Nissan Motor Co., Ltd.
- Current Assignee: Nissan Motor Co., Ltd.
- Current Assignee Address: JP Yokohama-shi
- Agency: Foley & Lardner LLP
- Priority: JP2005-123629 20050421
- International Application: PCT/JP2006/306465 WO 20060329
- International Announcement: WO2006/114972 WO 20061102
- Main IPC: H01L31/0236
- IPC: H01L31/0236 ; H01L31/18 ; H01L31/20
Abstract:
The semiconductor photoelectrode of the present invention includes a metallic substrate having irregularities in a surface and a semiconductor layer which is formed on the surface of the metallic substrate and composed of a photocatalytic material. This can increase the light absorption efficiency and, furthermore, prevent recombination of charges.
Public/Granted literature
- US20090060804A1 SEMICONDUCTOR PHOTOELECTRODE, METHOD FOR MANUFACTURING THE SAME, AND LIGHT ENERGY CONVERTING DEVICE Public/Granted day:2009-03-05
Information query
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