Invention Grant
- Patent Title: Bi-directional HEMT/GaN half-bridge circuit
- Patent Title (中): 双向HEMT / GaN半桥电路
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Application No.: US12118027Application Date: 2008-05-09
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Publication No.: US07961482B2Publication Date: 2011-06-14
- Inventor: Thomas Ribarich
- Applicant: Thomas Ribarich
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H02M3/335
- IPC: H02M3/335

Abstract:
A half-bridge circuit in accordance with an embodiment of the present application includes an input voltage terminal operable to receive an input voltage, a first bi-directional switch, a second bi-directional switch connected in series with the first bi-directional switch, wherein the first and second bi-directional switches are connected to the input voltage terminal such that the input voltage is provided across the first and second bi-directional switches and a controller operable to turn the first and second bi-directional switches ON and OFF such that a desired voltage is provided at an midpoint node positioned between the first bi-directional switch and the second bi-directional switch. The first bi-directional switch and the second bi-directional switch are high electron mobility transistors structured to allow for conduction in two directions when ON and to prevent conduction in any direction when OFF.
Public/Granted literature
- US20080278985A1 BI-DIRECTIONAL HEMT/GaN HALF-BRIDGE CIRCUIT Public/Granted day:2008-11-13
Information query
IPC分类: