Invention Grant
US07961488B2 Method for modifying data more than once in a multi-level cell memory location within a memory array 有权
用于在存储器阵列中的多级单元存储器位置中多次修改数据的方法

Method for modifying data more than once in a multi-level cell memory location within a memory array
Abstract:
A method and apparatus for programming one or more bits in an upper page twice depending on the value in a corresponding bit in a corresponding lower page in a multi-level cell device. The method includes the steps of initializing the bit in the lower page and the bit in the upper page by storing a value of one in each of the bits. One or more bits in the lower page are then programmed such that a one is stored in the one or more bits of the lower page. One or more bits in the upper page are then programmed such that a one is stored in the one or more bits of the upper page. The one or more bits in the upper page are then reprogrammed such that the value in the one or more bits of the upper page transitions from a one to a zero. The transition from a one to a zero in the one or more bits of the upper page is used to mark for performance of a block management function the block.
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