Invention Grant
US07961488B2 Method for modifying data more than once in a multi-level cell memory location within a memory array
有权
用于在存储器阵列中的多级单元存储器位置中多次修改数据的方法
- Patent Title: Method for modifying data more than once in a multi-level cell memory location within a memory array
- Patent Title (中): 用于在存储器阵列中的多级单元存储器位置中多次修改数据的方法
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Application No.: US12073265Application Date: 2008-03-03
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Publication No.: US07961488B2Publication Date: 2011-06-14
- Inventor: Michael M. Abraham
- Applicant: Michael M. Abraham
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: G11C11/42
- IPC: G11C11/42

Abstract:
A method and apparatus for programming one or more bits in an upper page twice depending on the value in a corresponding bit in a corresponding lower page in a multi-level cell device. The method includes the steps of initializing the bit in the lower page and the bit in the upper page by storing a value of one in each of the bits. One or more bits in the lower page are then programmed such that a one is stored in the one or more bits of the lower page. One or more bits in the upper page are then programmed such that a one is stored in the one or more bits of the upper page. The one or more bits in the upper page are then reprogrammed such that the value in the one or more bits of the upper page transitions from a one to a zero. The transition from a one to a zero in the one or more bits of the upper page is used to mark for performance of a block management function the block.
Public/Granted literature
- US20080232165A1 Method for modifying data more than once in a multi-level cell memory location within a memory array Public/Granted day:2008-09-25
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