Invention Grant
- Patent Title: Non-volatile state retention latch
- Patent Title (中): 非易失性状态保持闩锁
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Application No.: US12328042Application Date: 2008-12-04
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Publication No.: US07961502B2Publication Date: 2011-06-14
- Inventor: Lew Chua-Eoan
- Applicant: Lew Chua-Eoan
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Electronic circuits use latches including a magnetic tunnel junction (MTJ) structure and logic circuitry arranged to produce a selective state in the MTJ structure. Because the selective state is maintained magnetically, the state of the latch or electronic circuit can be maintained even while power is removed from the electronic device.
Public/Granted literature
- US20100141322A1 Non-Volatile State Retention Latch Public/Granted day:2010-06-10
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