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US07961514B2 Semiconductor device, a method of using a semiconductor device, a programmable memory device, and method of producing a semiconductor device 有权
半导体器件，使用半导体器件的方法，可编程存储器件以及半导体器件的制造方法

Semiconductor device, a method of using a semiconductor device, a programmable memory device, and method of producing a semiconductor device
Abstract:
A semiconductor device is described. A channel area is arranged in a semiconductor substrate between a first contact area and a second contact area. A first programmable structure includes a first control structure. The first programmable structure is arranged such that a conductivity of a first section of the channel area depends on a voltage applicable to the first control structure of the first programmable structure and on an information value stored in the first programmable structure. A second programmable structure includes a second control structure. The second programmable structure is arranged such that a conductivity of a second section of the channel area depends on a voltage applicable to the second control structure of the second programmable structure and on an information value stored in the second programmable structure. The first section and the second section of the channel area are electrically connected in series between the first contact area and the second contact area.
Abstract(Chinese):

描述半导体器件。 沟道区域布置在第一接触区域和第二接触区域之间的半导体衬底中。 第一可编程结构包括第一控制结构。 第一可编程结构被布置成使得通道区域的第一部分的电导率取决于可应用于第一可编程结构的第一控制结构的电压以及存储在第一可编程结构中的信息值。 第二可编程结构包括第二控制结构。 第二可编程结构被布置成使得通道区域的第二部分的电导率取决于可应用于第二可编程结构的第二控制结构的电压以及存储在第二可编程结构中的信息值。 通道区域的第一部分和第二部分串联地电连接在第一接触区域和第二接触区域之间。

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