Invention Grant
- Patent Title: Method of operating semiconductor device
- Patent Title (中): 操作半导体器件的方法
-
Application No.: US12591202Application Date: 2009-11-12
-
Publication No.: US07961539B2Publication Date: 2011-06-14
- Inventor: Sang-moo Choi , Won-joo Kim , Tae-hee Lee
- Applicant: Sang-moo Choi , Won-joo Kim , Tae-hee Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0117475 20081125
- Main IPC: G11C13/00
- IPC: G11C13/00
Abstract:
Provided is a method of operating a semiconductor device, in which a gate voltage or a drain voltage is adjusted in order to add carriers to or remove carriers from a body region, thereby realizing semiconductor having a plurality of data states.
Public/Granted literature
- US20100127759A1 Method of operating semiconductor device Public/Granted day:2010-05-27
Information query
