Invention Grant
- Patent Title: Wavelength tunable semiconductor laser device, controller for the same, and control method for the same
- Patent Title (中): 波长可调半导体激光器件,控制器相同,控制方法相同
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Application No.: US12529337Application Date: 2008-03-07
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Publication No.: US07961769B2Publication Date: 2011-06-14
- Inventor: Naoki Fujiwara , Hiroyuki Ishii , Hiromi Oohashi , Hiroshi Okamoto
- Applicant: Naoki Fujiwara , Hiroyuki Ishii , Hiromi Oohashi , Hiroshi Okamoto
- Applicant Address: JP Tokyo
- Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee Address: JP Tokyo
- Agency: Workman Nydegger
- Priority: JP2007-058090 20070308
- International Application: PCT/JP2008/054212 WO 20080307
- International Announcement: WO2008/108475 WO 20080912
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
An object is to provide a wavelength tunable semiconductor laser device, a controller for the same and a control method for the same, which prevent wavelength drifts. The wavelength tunable semiconductor laser device includes an active region for oscillating a laser beam, and a wavelength tuning region for shifting a wavelength of the laser beam. In this device, a thermal compensation region for converting most of the inputted electric power to heat is provided adjacent to the wavelength tuning region, and the sum of an electric power inputted into the wavelength tuning region and an electric power inputted into the thermal compensation region is always kept constant.
Public/Granted literature
- US20100103963A1 Wavelength Tunable Semiconductor Laser Device, Controller for the Same, and Control Method for the Same Public/Granted day:2010-04-29
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