Invention Grant
- Patent Title: Repairable block redundancy scheme
- Patent Title (中): 可修复块冗余方案
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Application No.: US12427461Application Date: 2009-04-21
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Publication No.: US07962784B2Publication Date: 2011-06-14
- Inventor: Vinod Lakhani , Benjamin Louie
- Applicant: Vinod Lakhani , Benjamin Louie
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: G06F11/00
- IPC: G06F11/00

Abstract:
A scheme for block substitution within a flash memory device is disclosed which uses a programmable look-up table to store new addresses for block selection when certain input block addresses are received. The new addresses are loaded into a programmable fuse latch each time an address transition is detected in the input address. The new addresses may contain block addresses or block and bank addresses.
Public/Granted literature
- US20090204847A1 REPAIRABLE BLOCK REDUNDANCY SCHEME Public/Granted day:2009-08-13
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