Invention Grant
- Patent Title: High temperature strain gages
- Patent Title (中): 高温应变片
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Application No.: US12228233Application Date: 2008-08-11
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Publication No.: US07963171B2Publication Date: 2011-06-21
- Inventor: Otto J. Gregory , Tao You
- Applicant: Otto J. Gregory , Tao You
- Applicant Address: US RI Providence
- Assignee: Board of Governors for Higher Education, State of Rhode Island and Providence Plantations
- Current Assignee: Board of Governors for Higher Education, State of Rhode Island and Providence Plantations
- Current Assignee Address: US RI Providence
- Agency: Gauthier & Connora LLP
- Main IPC: G01L1/00
- IPC: G01L1/00

Abstract:
A ceramic strain gage based on reactively sputtered indium-tin-oxide (ITO) thin films is used to monitor the structural integrity of components employed in aerospace propulsion systems operating at temperatures in excess of 1500° C. A scanning electron microscopy (SEM) of the thick ITO sensors reveals a partially sintered microstructure comprising a contiguous network of submicron ITO particles with well defined necks and isolated nanoporosity. Densification of the ITO particles was retarded during high temperature exposure with nitrogen thus stabilizing the nanoporosity. ITO strain sensors were prepared by reactive sputtering in various nitrogen/oxygen/argon partial pressures to incorporate more nitrogen into the films. Under these conditions, sintering and densification of the ITO particles containing these nitrogen rich grain boundaries was retarded and a contiguous network of nano-sized ITO particles was established.
Public/Granted literature
- US20090173162A1 High temperature strain gages Public/Granted day:2009-07-09
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