Invention Grant
US07963248B2 Plasma generator, substrate treating apparatus including the same and substrate treating method 有权
等离子体发生器,包括其的基板处理装置和基板处理方法

  • Patent Title: Plasma generator, substrate treating apparatus including the same and substrate treating method
  • Patent Title (中): 等离子体发生器,包括其的基板处理装置和基板处理方法
  • Application No.: US11888243
    Application Date: 2007-07-31
  • Publication No.: US07963248B2
    Publication Date: 2011-06-21
  • Inventor: Yi Jung Kim
  • Applicant: Yi Jung Kim
  • Applicant Address: KR Chungcheongnam-do
  • Assignee: Semes Co. Ltd
  • Current Assignee: Semes Co. Ltd
  • Current Assignee Address: KR Chungcheongnam-do
  • Agency: Jenkins, Wilson, Taylor & Hunt P.A.
  • Priority: KR10-2006-0075679 20060810
  • Main IPC: C23C16/00
  • IPC: C23C16/00 C23F1/00 H01L21/306
Plasma generator, substrate treating apparatus including the same and substrate treating method
Abstract:
A plasma generator includes a gas supply member configured to supply source gas and a plurality of electrodes for generating plasma using the source gas. The plurality of electrodes have a long rod shape in a first direction and are arranged abreast in a second direction vertical to the first direction to be spaced apart from each other at the same height. A spaced distance between electrodes is adjusted by means of a distance adjusting unit including a first connector connected to a first electrode, a second connector connected to a second electrode, and a first shaft pin connecting the first and second connectors to each other. The first and second connectors rotate on the first shaft pin to adjust a spaced distance between the first and second electrodes.
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